US9287134B2 - Titanium oxide etch - Google Patents

Methods of selectively etching titanium oxide relative to silicon oxide, silicon nitride and/or other dielectrics are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and/or a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react

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TITANIUM OXIDE ETCH - APPLIED MATERIALS, INC.

2015-7-23 · A direction sputtering pretreatment is performed prior to the remote plasma etch and enables an increased selectivity as well as a directional selectivity. In some eodiments, the titanium oxide etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.

US9287134B2 - Titanium oxide etch - Google Patents

Methods of selectively etching titanium oxide relative to silicon oxide, silicon nitride and/or other dielectrics are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and/or a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react

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This general use of the term plasma etching will be avoided here. The term "dry etching" will be used to refer to all gas-phase plasma-based etching techniques. Dry etching and chemical vapor deposition 663 Most dry etching methods used today depend to some extent on both chemical and physical processes for the etching action.

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Synthesis of titanium dioxide nanotubes with …

Furthermore, F − is an essential factor for the formation of tubular structures because of its ability to form a soluble hexafluoride titanium complex ([TiF 6] 2−). In addition, it has a small ionic radius, making it suitable to enter the growing TiO 2 lattice and be transported through the oxide by the applied field .

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Sulfur hexafluoride is itself a non-toxic and harmless gas, but under the effect of high temperature and high pressure arc, it tends to decompose and release a variety of products. Some of these decomposition products are toxic substances that cause harm to the human body. At the same time, if a large amount of sulfur hexafluoride gas is

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